Langanzeige der Metadaten
| DC Element | Wert | Sprache |
|---|---|---|
| dc.contributor.author | Klüpfel, Fabian J. | - |
| dc.contributor.author | Pichler, Peter | - |
| dc.date.accessioned | 2021-02-18T11:56:58Z | - |
| dc.date.available | 2021-02-15T14:35:08Z | - |
| dc.date.available | 2021-02-18T11:56:58Z | - |
| dc.date.issued | 2021-01 | - |
| dc.identifier.uri | https://fordatis.fraunhofer.de/handle/fordatis/190.2 | - |
| dc.identifier.uri | http://dx.doi.org/10.24406/fordatis/116.2 | - |
| dc.description.abstract | Within the European Project IONS4SET a compact model for a single electron transistor (SET) was developed. The SET is formed by a silicon nanodot embedded in a silicon dioxide layer between two highly doped silicon electrodes. Here, the implementation of the compact model in HSPICE is provided for circuit simulation. In addition, a VBA implementation into Excel is provided which can be used to calculate circuit characterisitcs and stability diagrams. | en |
| dc.language.iso | en | en |
| dc.relation.isbasedon | 10.1109/ACCESS.2019.2924913 | - |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en |
| dc.subject | circuit simulation | en |
| dc.subject | compact model | en |
| dc.subject | single electron transistor | en |
| dc.subject | SPICE | en |
| dc.subject.ddc | DDC::500 Naturwissenschaften und Mathematik::530 Physik::537 Elektrizität, Elektronik | en |
| dc.subject.ddc | DDC::600 Technik, Medizin, angewandte Wissenschaften::620 Ingenieurwissenschaften::621 Angewandte Physik | en |
| dc.title | Compact Model for a Silicon Single Electron Transistor in a Stacked Nanopillar - Implementations in HSPICE and EXCEL/VBA | en |
| dc.type | Source Code | en |
| dc.contributor.funder | European Commission EC | en |
| dc.description.technicalinformation | The provided implementation of the SET compact model was developed for HSPICE O-2018.09 from Synopsys, Inc. The VBA 7.1 implementation was developed for Excel2016 from Microsoft Corporation. For both, full examples with results are provided. | en |
| dc.title.translated | Kompaktmodell für einen Einzelelektronentransistor in einer geschichteten Nanosäule - Implementierungen in HSPICE und EXCEL/VBA | de |
| fordatis.institute | IISB Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie | en |
| fordatis.rawdata | false | en |
| fordatis.sponsorship.FundingProgramme | ICT-25/2015: Generic micro- and nano-electronic technologies | en |
| fordatis.sponsorship.projectid | 688072 | en |
| fordatis.sponsorship.projectname | Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology | en |
| fordatis.sponsorship.projectacronym | IONS4SET | en |
| fordatis.sponsorship.ResearchFrameworkProgramm | Horizon 2020 | en |
| Enthalten in den Sammlungen: | Fraunhofer-Institut für Integrierte Systeme und Bauelementtechnologie IISB | |
Dateien zu dieser Ressource:
| Datei | Beschreibung | Größe | Format | |
|---|---|---|---|---|
| SET-HSPICE-implementation.zip | HSPICE O-2018.09 implementation of the SET model | 33,61 kB | Unknown | Öffnen/Download |
| SET-EXCEL-VBA-implementation.zip | EXCEL2016/VBA 7.1 implementation of the SET model | 655,12 kB | Unknown | Öffnen/Download |
Versionshistorie
| Version | Ressource | Datum | Zusammenfassung |
|---|---|---|---|
| 2 | fordatis/190.2 | 2021-02-18 10:29:26.461 | |
| 1 | fordatis/190 | 2021-02-15 15:35:08.0 |
Diese Ressource wurde unter folgender Copyright-Bestimmung veröffentlicht: Lizenz von Creative Commons
